Image from Google Jackets

Normal view MARC view ISBD view

1:Power device 2:Integrated circuits 3MoS field-effect transistors: N-channel depletion types 3N187 4:Mos field effect transistors:N-channel depletion types 3N200.

Language: ENG Publication details: Bangalore Bharat Electronics Ltd. 1975Subject(s):

SOLIDS

DDC classification:

C21e L5

Average rating: 0.0 (0 votes)

Holdings ( 1 )
Comments ( 0 )

Holdings
Item type	Current library	Call number	Status	Notes	Date due	Barcode
Book	Prof. S.S.Basavanal Library	C21e L5 (Browse shelf(Opens below))	Available	101280		101280

Browsing Prof. S.S.Basavanal Library shelves Close shelf browser (Hides shelf browser)

Previous	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available	No cover image available No cover image available		Next
Previous	C21aN6 L0 solid state physics literature guides vol 1: Ferroelectric materials and ferroelectricity comp by T G Connolly and Errett turner.	C21e L1-;1 BEL Seni-conductors: Data manual (cops 2)	C21e L1-;1 BEL Seni-conductors: Data manual (cops 2)	C21e L5 1:Power device 2:Integrated circuits 3MoS field-effect transistors: N-channel depletion types 3N187 4:Mos field effect transistors:N-channel depletion types 3N200.	C21e L5 Semiconductors: Data Manual.	C21jN24z7 M6 Positon studies of solids, surfaces. and atoms: to celebrate stephen berko's 60th Birthday.	C21k Q1 Encyclopaedia of solidstate physics	Next

There are no comments on this title.

to post a comment.

Print
Add to your cart (remove)
More searches

Search for this title in:
Other Libraries (WorldCat) Other Databases (Google Scholar) Online Stores (Bookfinder.com) Open Library (openlibrary.org)

Share